Mayank Shrivastava

Prof. Mayank Shrivastava received his PhD degree from Indian Institute of Technology Bombay (2010). For his PhD work he received excellence in research award for his PhD thesis and industrial impact award from IIT Bombay in 2010. He is among the first recipients of Indian section of American TR35 award (2010) and the first Indian to receive IEEE EDS Early Career Award (2015). Besides, he is an IEEE Senior Member and has received several other national awards and honors of high repute, like National Academy of Sciences, India, (NASI) Young Scientist Platinum Jubilee Award – 2018; Indian National Academy of Science (INSA) Young Scientist Award - 2018; Indian National Academy of Engineering (INAE) Innovator Entrepreneur Award 2018 (Special commendation); Indian National Academy of Engineering (INAE) Young Engineer Award - 2017; INAE Young Associate (since 2017); Indian Academy of Sciences (IASc), Young Associate, 2018 – 2023; Department of Electronics & Information Technology (DeitY), Young Faculty Fellowship. He has received best paper awards from several international conferences like Intel Corporation Asia academic forum; VLSI design conference and EOSESD Symposium. Prof. Shrivastava’s current research deals with experimentation, design and modeling of beyond CMOS devices using Graphene and TMDCs, wide bandgap material-based power semiconductor devices and ESD reliability in advanced and beyond CMOS nodes. He had held visiting positions in Infineon Technologies, Munich, Germany from April 2008 to October 2008 and again in May 2010 to July 2010. He worked for Infineon Technologies, East Fishkill, NY, USA; IBM Microelectronics, Burlington, VT, USA; Intel Mobile Communications, Hopewell Junction, NY, USA; and Intel Corp., Mobile and Communications Group, Munich, Germany between 2010 and 2013. He joined Indian Institute of Science as a faculty member in year 2013 where he is currently working as an Associate Professor. Prof. Shrivastava has over 150 peer reviewed international publications and 50 patents.