基本信息
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职业迁徙
个人简介
Research Interests
Currently his research interests cover these topics:
Emerging memory devices (PCM, RRAM, FeRAM): device and material characterization and modelling; performances and reliability investigation and optimization.
Electron device reliability: characterization and modelling of breakdown, BTI, current noise; defect spectroscopy from electrical measurements.
Power amplifier (PA) for RF and mm-wave applications: modelling, design and characterization of PA circuits in CMOS and BiCMOS technology: Pa reliability.
Energy harvesting systems: energy transducer characterization and modelling; design and characterization of power converters for energy harvesting and autonomous sensors.
Printed audio transducers: development, modelling and characterization of novel audio transducers (e.g. thermos-acoustic loudspeaker and microphone) exploiting printed technologies and nano-structured materials.
Flash memory devices based on Floating Gate (FG) and Charge Trapping (CT): characterization and modelling; impact of material properties; device performances and reliability optimization; radiation effects.
Currently his research interests cover these topics:
Emerging memory devices (PCM, RRAM, FeRAM): device and material characterization and modelling; performances and reliability investigation and optimization.
Electron device reliability: characterization and modelling of breakdown, BTI, current noise; defect spectroscopy from electrical measurements.
Power amplifier (PA) for RF and mm-wave applications: modelling, design and characterization of PA circuits in CMOS and BiCMOS technology: Pa reliability.
Energy harvesting systems: energy transducer characterization and modelling; design and characterization of power converters for energy harvesting and autonomous sensors.
Printed audio transducers: development, modelling and characterization of novel audio transducers (e.g. thermos-acoustic loudspeaker and microphone) exploiting printed technologies and nano-structured materials.
Flash memory devices based on Floating Gate (FG) and Charge Trapping (CT): characterization and modelling; impact of material properties; device performances and reliability optimization; radiation effects.
研究兴趣
论文共 335 篇作者统计合作学者相似作者
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B. Beltrando,M. A. Villena,A. Kumar,S. Gangopadhyay, D. Kamalanathan, E. Smith, N. Kazem, G. Saheli, S. Weeks,M. Haverty,M. Kaliappan,A. Padovani, S. Krishnan, J. Anthis,L. Larcher,M. Pesic
2024 IEEE International Memory Workshop (IMW)pp.1-4, (2024)
IEEE electron device lettersno. 2 (2024): 236-239
2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)pp.1-1, (2024)
2024 IEEE International Reliability Physics Symposium (IRPS)pp.1-5, (2024)
Bastien Bcltrando, Bruno Coppolelli, Jung-Bae Kim, Yang Ho Bae, Stephen Weeks, Lisa Enman, Ghazal Saheli, Davide Cornigli, Stuart Brinkley,Mark Saly,Luca Larcher,Dong Kil Yim,Milan Pesic
IEEE International Reliability Physics Symposium (2024)
Andrea Palmieri, Mahdi Tavakoli,Chi Ching, Wenkai Zheng, Shi You, Xiaodong Zhang, Davide Cornigli,Michael Haverty, Navneet Singh,Luca Larcher, Monika Jamieson,Ajay Bhatnagar,Alexander Jansen,Max Gage,Jianshe Tang, Sameer Deshpande, Brian Brown, Arun Srivatsa,Mehul Naik, Bo Xie, Jerry Gelatos,Joung Joo Lee,Xianmin Tang,Gaurav Thareja,Milan Pesic
2024 IEEE International Reliability Physics Symposium (IRPS)pp.10A.3-1-10A.3-6, (2024)
2023 IEEE International Integrated Reliability Workshop (IIRW) (2023)
IEEE Transactions on Electron Devicesno. 4 (2023): 1808-1814
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC)pp.805-809, (2023)
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作者统计
#Papers: 335
#Citation: 8908
H-Index: 46
G-Index: 83
Sociability: 7
Diversity: 3
Activity: 30
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