Jun-Hwan Shin received the B.S. degree in electrical engineering from Kyungpook National University, Daegu, Republic of Korea, in 2009 and the Ph.D. degree from the Department of Advanced Device Technology from the University of Science and Technology, Daejeon, Republic of Korea, in 2016. In 2019, he joined Terahertz research section, Electronics and Telecommunications Research Institute (ETRI), Deajeon, Republic of Korea where he is involved in the development of THz mixers and zero- bias detectors based on Schottky barrier diodes for THz imaging and communication applications.