Joo-Sun Choi

Joo Sun Choi received the B.S. degree in electronics engineering from Seoul National University, Seoul, Korea, in 1986, and the M.S. and Ph.D. degrees in electrical engineering from Korea Advanced Institute of Science and Technology (KAIST) in 1989 and 1995, respectively. In 1989, he joined Hyundai Electronics Co. Ltd. (now Hynix Semiconductor), Ichon, Korea, where he was involved in device and circuit design for the high-speed dynamic RAMs such as Synchronous DRAM, DDR, DDR2 and Graphic DRAM. From 2002 to 2004, he was with Micron Technology, Boise, ID, USA, and worked in the strategic marketing group for the product definition and enabling of high-speed memory devices. In late 2004, he joined Samsung Electronics, Hwasung, Korea, and is now in charge of DRAM technology, design and product engineering for the computing systems, mobile, consumer and graphics as a Senior Vice President. He has authored more than 30 papers in the field of electronic circuits and devices, and holds more than 25 U.S. patents. His current focus includes memory technology scaling, low-power memory design, high-speed memory and I/O design and system oriented memory solution. From 1996 to 2001, Dr. Choi served as a committee member of the Joint Electronic Devices Engineering Council (JEDEC) and contributed to the industry standards of dynamic memories such as SDRAM, DDR, DDR2, and several generations of SDR, DDR, DDR2, and Graphic DRAMs. He served as a memory sub-committee member of IEEE ISSCC from 2007 to 2012.