Jun-Bae Kim

Jun-Bae Kim received the B.S., M.S., and Ph.D. degrees in electronic engineering from Hanyang University, Seoul, South Korea, in 1993, 1995, and 2001, respectively. In 2004, he joined Samsung Electronics, Hwaseong, South Korea, where he has been involved in the design of high speed DRAM interface circuits such as DLL, IO circuits. Since 2018, he has been responsible for IC-level EMC at DRAM. His current research interests include IC-level EMC, signal/power integrity, and IO circuits.