Jin-Ping Han (S'98–M'02) received the B.S. degree in chemistry from Xinjiang University, China, in 1988, and the M.S. and Ph.D. degrees in electrical engineering from Yale University, New Haven, CT, in 1998 and 2002 respectively. Her Ph.D. dissertation was on the ferroelectric materials, high-k dielectrics and MFISFET for the memory application. She joined the National Institute of Standards and Technology (NIST) as a Researcher in 2002, mainly participating in research projects on advanced metal–oxide–semiconductor (MOS) devices with alternate high-k gate dielectrics, and silicon-based nanodevices including nanowire single electron transistors, quantum dot memory device,s and molecular devices. She holds one US patent. Dr. Han has received the National All-Collegiate Invention Award (US) in 1998 and received the best paper awards from the Connecticut Microelectronic and Optoelectronic Consortium (CMOC) three times.