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个人简介
Jean Baptiste Fonder was born in Charleville-Mézières, France, in July 1986. He received the Diploma degree in electrical engineering (with a specialization in microwave electronics) from the Ecole Nationale Supérieur de l’Electronique et de ses Applications (ENSEA), Cergy-Pontoise, France, in 2009, and the Master degree “Electronique des Systèmes Autonomes” from Cergy Pontoise University, Cergy-Pontoise, France, in 2009.
In October 2009, he joined the Equipes Traitement de l’Information et Systèmes (ETIS), Cergy-Pontoise, France, and Groupe de Physique des Matériaux (GPM), Rouen, France, laboratories as a Ph.D. student, where his research dealt with the reliability study of gallium–nitride power HEMTs for RF amplifiers. He is currently a Postdoctoral Fellow with the AMPERE Laboratory, Lyon, France, where he is currently involved with system-on-chip (SiC) power device characterization and reliability fields.
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Materials science forum (2018): 593-596
Materials science forum (2016): 422-425
HAL (Le Centre pour la Communication Scientifique Directe) (2014)
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#Papers: 6
#Citation: 27
H-Index: 3
G-Index: 4
Sociability: 3
Diversity: 1
Activity: 0
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