Surge Driven Evolution of Schottky Barrier Height on 4H-Sic JBS Diodes
Materials science forum(2018)
摘要
In this paper we will present the results of repetitive surge stress carried out on six 3.3 kV-5A Ti/Ni 4H-SiC JBS diodes. Repetitive current peaks between 10 A and 24 A have been applied and some diodes were able to endure 100,000 cycles while others failed before. The causes of failure have not been determined but a correlation between peak surge current and physical parameters evolution rate has been proven. Simulations show that contact temperature during surge can reach 300 °C, which is very close to Schottky contact annealing temperatures.
更多查看译文
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要