Jang-Gn Yun

Jang-Gn Yun (S'04) was born in Daejeon, Korea, in 1980. He received the B.S. and M.S. degrees in electronics engineering from Chungnam National University, Daejeon, Korea, in 2003 and 2006, respectively. From June 2004 to May 2005, he was with the Institut de Microélectronique, Electromagnétisme et Photonique, Grenoble, France, for an international joint research program supported by the Korean Science and Engineering Foundation. He is currently with Samsung Electronics Company Ltd., Suwon, Korea. He is the author or coauthor of more than 150 papers in domestic and international journals and conferences. His main research interests include salicide process, silicon-on-insulator devices, and Flash memory devices for nanoscale complementary metal–oxide–semiconductor and nonvolatile memory technologies. Dr. Yun has been serving as a Reviewer of the IEEE Transactions on Electron Devices, the IEEE Electron Device Letters, the American Chemical Society Applied Materials and Interfaces, and the International Journal of Physical Sciences since 2008. He was the recipient of one bronze and two silver prizes from Samsung Humantech Thesis Prize in 2003, 2009, and 2010, respectively, and the Silver Prize from the IEEE Student Paper Contest held by IEEE Seoul Section in 2009.