Carlo Gilardi - Stanford University | 人才画像

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论文共 17 篇作者统计合作学者相似作者

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Omni 3D: BEOL-Compatible 3D Logic with Omnipresent Power, Signal, and Clock

Suhyeong Choi,Carlo Gilardi, Paul Gutwin,Robert M. Radway, Tathagata Srimani,Subhasish Mitra

arxiv（2024）

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Future Design Direction for SRAM Data Array: Hierarchical Subarray with Active Interconnect

Hsiao-Hsuan Liu,Carlo Gilardi,Shairfe M. Salahuddin,Zhenlin Pei,Pieter Schuddinck,Yang Xiang,Pieter Weckx,Geert Hellings,Marie Garcia Bardon,Julien Ryckaert,Chenyun Pan, Subhasish Mitra,Francky Catthoor

IEEE Transactions on Circuits and Systems I Regular Paperspp.1-12, (2024)

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Building High Performance Transistors on Carbon Nanotube Channel

Symposium on VLSI Circuitspp.1-2, (2023)

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Ultra-Dense 3D Physical Design Unlocks New Architectural Design Points with Large Benefits

Tathagata Srimani,Robert M. Radway,Jinwoo Kim,Kartik Prabhu,Dennis Rich,Carlo Gilardi,Priyanka Raina,Max Shulaker,Sung Kyu Lim,Subhasish Mitra

2023 Design, Automation &amp Test in Europe Conference &amp Exhibition (DATE) (2023)

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Barrier Booster for Remote Extension Doping and its DTCO for 1D & 2D FETs

Carlo Gilardi,Gilad Zeevi, Suhyeong Choi,Sheng-Kai Su,Terry Y.T. Hung,Shengman Li, Nate Safron,Qing Lin,Tathagata Srimani,Matthias Passlack,Gregory Pitner,Edward Chen,Iuliana Radu,H.-S. Philip Wong,Subhasish Mitra

2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)

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Switching Limits of Top-Gated Carbon Nanotube Field-Effect Transistors

A. Sanchez-Soares,C. Gilardi,Q. Lin,T. Kelly, S. -K. Su,G. Fagas,J. C. Greer,G. Pitner,E. Chen

SOLID-STATE ELECTRONICS（2023）

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Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors

Qing Lin,Carlo Gilardi,Sheng-Kai Su,Zichen Zhang,Edward Chen,Prabhakar Bandaru,Andrew Kummel,Iuliana Radu,Subhasish Mitra,Greg Pitner,H. -S. Philip Wong

ACS Nanono. 21 (2023): 21083-21092

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N3XT 3D Technology Foundations and Their Lab-to-Fab: Omni 3D Logic, Logic+Memory Ultra-Dense 3D, 3D Thermal Scaffolding

T. Srimani, A. Bechdolt, S. Choi,C. Gilardi, A. Kasperovich, S. Li, Q. Lin,M. Malakoutian, P. McEwen,R.M. Radway, D. Rich, A.C. Yu, S. Fuller, S. Achour,S. Chowdhury,H.-S. P. Wong,M. Shulaker, S. Mitra

2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)

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Effect of Back-Gate Dielectric on Indium Tin Oxide (ITO) Transistor Performance and Stability

Alwin Daus,Lauren Hoang,Carlo Gilardi,Sumaiya Wahid,Jimin Kwon,Shengjun Qin,Jung-Soo Ko,Mahnaz Islam,Aravindh Kumar,Kathryn M. Neilson,Krishna C. Saraswat,Subhasish Mitra,H. -S. Philip Wong,Eric Pop

IEEE transactions on electron devices/IEEE transactions on electron devicesno. 11 (2023): 5685-5689

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High-performance and low parasitic capacitance CNT MOSFET: 1.2 mA/μm at VDS of 0.75 V by self-aligned doping in sub-20 nm spacer

Shengman Li,Tzu-Ang Chao,Carlo Gilardi,Nathaniel Safron,Sheng-Kai Su,Gilad Zeevi, Andrew Denis Bechdolt,Matthias Passlack, Aaryan Oberoi,Qing Lin, Ziehen Zhang,Kesong Wang,Harshil Kashyap,San-Lin Liew,Vincent D.-H Hou,Andrew Kummel, Luliana Radu,Gregory Pitner,H.-S. Philip Wong,Subhasish Mitra

2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)

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