Chandran Sandhya

C. Sandhya (S'07) received the M.Tech. degree in microelectronics and the Ph.D. degree in electrical engineering from the Indian Institute of Technology Bombay, Mumbai, India, in 2006 and 2010, respectively. During her graduation, she received a Fellowship for the Global Research Collaboration (GRC) from the Semiconductor Research Corporation (SRC). Since November 2009, she has been a Device Engineer with Samsung Semiconductor R&D Center, South Korea. Her research interests include device physics and flash memory optimization through device design, modeling, reliability characterization, and simulation.