Analysis of the Effect of Boron Doping on GeTe Phase Change Memories

C. Sandhya,A. Bastard,L. Perniola,J. C. Bastien,A. Toffoli,E. Henaff,A. Roule,A. Persico,B. Hyot,V. Sousa,B. De Salvo,G. Reimbold

2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)（2012）

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关键词
Phase change memories,Boron doping,SET,RESET,Growth dominated crystallization,MLC,Endurance
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