Bernd Heinemann

Bernd Heinemann received the Diploma degree in physics from Humboldt Universität zu Berlin, Berlin, Germany, in 1984, and the Ph.D. degree in electrical engineering from Technische Universit at Berlin, Berlin, in 1997. He joined the Leibniz Institute for High Performance Microelectronics (IHP) GmbH (now Innovations for High Performance Microelectronics), Frankfurt, Germany, in 1984. From 1984 to 1992, he contributed to the development of an epi-free 0.8-µm BiCMOS technology. Since 1993, he has been a member of a team working on the exploration and technological implementation of SiGe interconnection bipolar transistors (HBTs). His research interests include development and characterization of MOS and bipolar devices.