A Broadband 300 GHz Power Amplifier in a 130 Nm SiGe BiCMOS Technology for Communication Applications
IEEE JOURNAL OF SOLID-STATE CIRCUITS（2022）
关键词
Impedance,Layout,Broadband communication,Bandwidth,Integrated circuit interconnections,Impedance matching,Transformers,6G,communications,power amplifier (PA),SiGe interconnection bipolar transistor (HBT),sub-mmWave,terahertz
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