A physics-based compact model of shield gate trench MOSFET

This paper develops a physics-based compact model of shield gate trench (SGT) MOSFET, including a drift region current, an analytical intrinsic drain potential and a charge on the capacitance between shield gate (SG) and the drift region. In order to describe the depletion in the drift region caused by SG, a drift region current model including velocity saturation is proposed to obtain I–V characteristics. An analytical model of the intrinsic drain potential is used for the charge model to correct CGD in the off-state, and a charge on the capacitance between SG and the drift region is added to the model to obtain precise CDS. The proposed charge model can capture the behaviors of the capacitance saturation caused by SG. The experimental data of 45V SGT MOSFET on I–V, C–V, QG and transient characteristics demonstrates the accuracy of the presented model.