基本信息
浏览量:0
职业迁徙
个人简介
Clément Charbuillet was born in France in 1979. He received the M.Eng degree in physics and the postgraduate diploma in microelectronics from the Institut National de Sciences Appliquées (INSA), Lyon, France, in 2002. His Ph.D. dissertation, done in collaboration between STMicroelectronics, Crolles, France, and the Institut d'Electronique, Microelectronique et Nanotechnologies (IEMN), concerned the study and integration of innovative devices able to overcome the 60-mV/dec limit of the subthreshold slope of the MOS transistor.
In 2006, he joined the team in STMicroelectronics in charge of CMOS modeling, which included analog applications. His work focuses on compact modeling of RF devices.
研究兴趣
论文共 4 篇作者统计合作学者相似作者
按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选
时间
引用量
主题
期刊级别
合作者
合作机构
Lucas Antunes,Pascal Masson,Julien Amouroux,Stephane Monfray,Julien Dura,Frederic Gianesello, Julien Babic,Romain Debroucke,Loic Welter,Siddhartha Dhar, Bernadette Gros,Clement Charbuillet,
2023 IEEE International Conference on Design, Test and Technology of Integrated Systems (DTTIS)pp.1-4, (2023)
引用0浏览0EIWOS引用
0
0
Siddhartha Dhar,Stephane Monfray,Frederic Gianesello,Franck Julien, Julien Dura, Charles-Alex Legrand,Julien Amouroux, Bernadette Gros,Loic Welter,Clement Charbuillet,Philippe Cathelin, Elodie Canderle,
2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systemspp.38-40, (2023)
作者统计
合作学者
合作机构
D-Core
- 合作者
- 学生
- 导师
数据免责声明
页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果,我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问,可以通过电子邮件方式联系我们:report@aminer.cn