Huo ChangxingInstitute of Microelectronics the Chinese Academy of Sciences关注立即认领分享关注立即认领分享基本信息浏览量:0职业迁徙个人简介暂无内容研究兴趣论文共 2 篇作者统计合作学者相似作者按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选时间引用量主题期刊级别合作者合作机构A 14nm 100Kb 2T1R Transpose RRAM with >150X resistance ratio enhancement and 27.95% reduction on energy-latency product using low-power near threshold read operation and fast data-line current stabling schemeLinfang Wang,Wang Ye,Jinru Lai,Jing Liu,Jianguo Yang,Xin Si,Changxing Huo,Chunmeng Dou,Xiaoxin Xu,Qi Liu,Dashan Shang,Feng Zhang,2021 Symposium on VLSI Technologypp.1-2, (2021)引用4浏览0EIWOS引用40BEOL Based RRAM with one extra-mask for low cost, highly reliable embedded application in 28 nm node and beyondHangbing Lv,Xiaoxin Xu,Peng Yuan,Danian Dong,Tiancheng Gong,Jing Liu,Zhaoan Yu,Peng Huang,Kun Zhang,Changxing Huo, Chanbing Chen,Yuanlu Xie,2017 IEEE International Electron Devices Meeting (IEDM)(2017)引用50浏览0EIWOS引用500作者统计合作学者合作机构D-Core合作者学生导师暂无相似学者,你可以通过学者研究领域进行搜索筛选数据免责声明页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果,我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问,可以通过电子邮件方式联系我们:report@aminer.cn