Vanadium-Doped Hafnium Oxide: A High-Endurance Ferroelectric Thin Film with Demonstrated Negative Capacitance

Ehsan Ansari, Niccolo Martinolli, Emeric Hartmann, Anna Varini,Igor Stolichnov,Adrian Mihai Ionescu

NANO LETTERS（2025）

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vanadium-doped hafnium oxide (V:HfO2),ferroelectricthin film,high endurance,CMOS-compatible,atomic layer deposition (ALD),negative capacitance

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