Study of the N− Region Formation Process in N-on-p HgCdTe Devices

The n− region is crucial to the performance of n-on-p HgCdTe devices. However, the underlying mechanisms governing its formation process remain insufficiently elucidated in current literature. In this work, the influence of annealing temperature on the n− region formation process was investigated systematically through experiments and one-dimensional (1D) simulation. The two key parameters, the transport rate of interstitials (TrI) and the diffusion coefficient of vacancies (DV) were determined through the 1D model, and their accuracy was validated by experiments. The determination of TrI and DV allows for more flexible and precise optimization of the n− region in HgCdTe, thereby providing valuable guidance for cost-effective, high performance, and reliable preparation of HgCdTe detectors.