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Stability of GaN HEMT Device under Static and Dynamic Gate Stress

Linfei Gao, Ze Zhong, Qiyan Zhang,Xiaohua Li,Xinbo Xiong,Shaojun Chen,Longkou Chen, Huaibao Yan, Anle Zhang,Jiajun Han,Wenrong Zhuang, Feng Qiu,Hsien-Chin Chiu,Shuangwu Huang,Xinke Liu

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY（2024）

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Key words
p-GaN HEMT,pulse I-V,positive bias temperature instability (PBTI),threshold voltage,Stability,mechanism
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