Impact of Bottom Electrode in HfO2-Based Rram Devices on Switching CharacteristicsAseel Zeinati,D. Misra,Dina H. Triyoso,Sophia Rogalskyj, K. Imakita,Kandabara Tapily,Steven Consiglio,Cory S. Wajda,Gert J. LeusinkMeeting abstracts（2023）引用 0|浏览21暂无评分关键词rram devices,bottom electrodeAI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
