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13.5 A 128Gb 1b/Cell 96-Word-Line-Layer 3D Flash Memory to Improve Random Read Latency with tPROG=75µs and tR=4µs

Toshiyuki Kouchi,Noriyasu Kumazaki,Masashi Yamaoka,Sanad Bushnaq,Takuyo Kodama,Yuki Ishizaki,Yoko Deguchi,Akio Sugahara,Akihiro Imamoto,Norichika Asaoka,Ryosuke Isomura,Takaya Handa,Junichi Sato,Hiromitsu Komai,Atsushi Okuyama,Naoaki Kanagawa,Yasufumi Kajiyama,Yuri Terada,Hidekazu Ohnishi,Hiroki Yabe,Cynthia Hsu,Mami Kakoi,Masahiro Yoshihara

2020 IEEE International Solid-State Circuits Conference - (ISSCC)（2020）

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Key words
RRL,storage class memory,fast main memories,flash memories,main-memory space,optimized SSD controller,fast flash memory chips,SSD performance,96-word-line-layer 3D flash memory,random read latency,hard-drives,solid state drive,read latency,FMCs,high-density 3D flash memories,program-erase operations,3D flash memory based SCM,programming sequence,external power supply,enhanced temperature sensor,read-program-verify performances,time 75.0 mus,storage capacity 128 Gbit,time 4 mus
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