Comprehensive Model for Ideal Reverse Leakage Current Components in Schottky Barrier Diodes Tested in GaN-on-SiC Samples

B. Orfao,G. Di Gioia,B. G. Vasallo,S. Perez,J. Mateos,Y. Roelens,E. Frayssinet,Y. Cordier,M. Zaknoune,T. Gonzalez

JOURNAL OF APPLIED PHYSICS（2022）

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