7nm FinFET technology heavy ion SEL evaluation using Xilinx Versal as case study

7nm FinFET is the last technology proposed by Xilinx and also for the first Adaptive Compute Acceleration Platform (ACAP). It is the successor of the commonly used System on Chip (SoC) Zynq XC7Z030, and more recently the Zynq® Ultrascale+. The Newspace industry is continuously requiring more performance capability and a better figure of merit regarding volume, mass and consumption. For space applications, one of the key metric is the radiation hardness of such devices. It needs to be carefully considered, to avoid reliability issues, and bad performance about system availability. The 7nm FinFET technology has been then selected to manage these new challenges. This paper presents first the technology and its benefits. Then a description of the GANIL irradiation facility and the test bench developed to perform heavy ion SEE tests is described. The Xilinx Versal device preparation for heavy ion campaign is also explained. Results and observations about Single Event Latchups (SEL) and other events are also presented. Furthermore, a laser test to localize observed events under beam is also described.