Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure
Device Research Conference（2022）
关键词
record RF performance,ultra-thin indium oxide transistors,buried-gate structure,back-end-of-line compatible transistors,low thermal budget,low subthreshold swing,high mobility,critical question,radio frequency characterization,RF transistors,channel lengths,n-type semiconductor channel material,ultra-thin indium oxide,size 150.0 nm,In2O3
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