谷歌浏览器插件
订阅小程序
在清言上使用

EUV Mask Absorber Induced Best Focus Shifts

Hazem Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Eelco van Setten, Claire van Lare, Tim Brunner, Mark van de Kerkhof, Andreas Erdmann

Optical and EUV Nanolithography XXXV(2022)

引用 0|浏览8
暂无评分
摘要
We investigate the induced best focus shifts by the mask absorber. The effect of n, k, bias and target size on BF shifts is studied. We consider lines and spaces with pitch = 5× target size. We present a correlation between the BF shifts and Zernike phase offset and the fourth-order Zernike coefficient that represents defocus. When no mitigation strategies are applied, low n absorber materials can show stronger BF shifts and stronger phase variation versus target size. The knowledge gained from this study will help to identify combinations of absorber properties (n, k, thickness) and biasing strategies, which provide high NILS, and threshold to size and enable proper focus control.
更多
查看译文
关键词
Backside Analysis
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要