Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode for Medium Voltage Current Source Inverter Application

Sneha Narasimhan,Ajit Kanale,Subhashish Bhattacharya,Jayant Baliga

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)（2021）

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摘要

This paper for the first time discusses the dynamic characterization of 3.3 kV SiC-based reverse-voltage blocking current switch for three different switch configurations - SiC MOSFET with a series diode, SiC MOSFETs connected in the common-source or common-drain configuration. The dynamic characterization of the current switch is performed using the conventional double-pulse test at different jun...

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关键词

Temperature measurement,Schottky diodes,MOSFET,Temperature,Silicon carbide,Photonic band gap,Switches

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