A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST
Dong Uk Lee,Ho Sung Cho,Jihwan Kim,Young Jun Ku,Sangmuk Oh,Chul Dae Kim,Hyun Woo Kim,Woo Young Lee,Tae Kyun Kim,Tae Sik Yun,Min Jeong Kim,SeungGyeon Lim,Seong Hee Lee,Byung Kuk Yun,Jun Il Moon,Ji Hwan Park,Seokwoo Choi, Young Jun Park,Chang Kwon Lee,Chunseok Jeong,Jae-seung Lee,Sang Hun Lee,Woo Sung We,Jong Chan Yun,Doobock Lee,Junghyun Shin,Seungchan Kim,Junghwan Lee,Jiho Choi,Yucheon Ju,Myeong-Jae Park,Kang Seol Lee,Youngdo Hur,Daeyong Shim,Sangkwon Lee,Junhyun Chun,Kyo-Won Jin 2020 IEEE INTERNATIONAL SOLID- STATE CIRCUITS CONFERENCE (ISSCC)（2020）
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