In-situ recovery of on-membrane PD-SOI MOSFET from TID defects after gamma irradiation

Amor Sedki,Valeriya Kilchytska,Farès Tounsi,Nicolas André,Laurent A. Francis,Denis Flandre

2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)（2021）

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摘要

This paper demonstrates a procedure for total insitu recovery of on-membrane n-type MOSFET from Total Ionizing Dose (TID) defects, due to the exposure to gamma radiation. After a total dose of 348 krad (Si), several annealing steps were applied using an integrated micro-heater with a maximum temperature of 364 °C. The electrical characteristics of the transistor are recorded initially in normal co...

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关键词

Temperature measurement,MOSFET,Annealing,Temperature,Electric variables,Silicon,Low-frequency noise

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