GaN-based Split Phase Transformer-Less PV Inverter with Auxiliary ZVT Circuit
IET power electronics（2020）
关键词
zero voltage switching,switching convertors,wide band gap semiconductors,DC-DC power convertors,invertors,III-V semiconductors,gallium compounds,power transformers,capacitance,leakage currents,DC-AC power convertors,bridge circuits,GaN devices,decoupling capacitance,half bridge split phase inverter stage,converter loss,switching node current,transistor,California Energy Commission efficiency,switching frequency,frequency 75,0 kHz,frequency 50,0 kHz,apparent power 1,0 kVA,GaN,common-ground dynamic dc-link inverter,GaN-based split phase transformer-less PV inverter,dc-link capacitance,complementary device,dc-link voltage,dc-dc stage,zero voltage transition,coupled inductors,split phase topology,gallium nitride devices,GaN-based 1 kVA hardware prototype,converter power density,HB inverter stage,split phase inductors,auxiliary inductor,auxiliary ZVT circuit,coupled inductor integrated magnetics,soft switching circuit,boost stage,double line frequency power,dc-to-ac power conversion,CGDL inverter,common ground configuration,negligible leakage-current
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