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Device Reliability Metric for End-Of-Life Performance Optimization Based on Circuit Level Assessment

A. Kerber,P. Srinivasan,S. Cimino,P. Paliwoda,S. Chandrashekhar,Z. Chbili,S. Uppal,R. Ranjan,M. -I. Mahmud,D. Singh,P. P. Manik,J. Johnson,F. Guarin,T. Nigam,B. Parameshwaran

2017 IEEE International Reliability Physics Symposium (IRPS)（2017）

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关键词
high-k dielectrics,metal gate,BTI,HCI,self-heating
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