Scalable eSiGe S/D Technology with Less Layout Dependence for 45-nm Generation

K. Ota,T. Sanuki,K. Yahashi,Y. Miyanami, K. Matsuo, J. Idebuchi, M. Moriya, K. Nakayama, R. Yamaguchi,Hiroyasu Tanaka,T. Yamazaki, S. Terauchi, A. Horiuchi,Shigeru Fujita,Ichiro Mizushima, H. Yamasaki,K. Nagaoka,A. Oishi,Y. Takegawa, K. Ohno,M. Iwai, Masanobu Saito,Fumiyoshi Matsuoka,Naoki Nagashima

symposium on vlsi technology（2006）

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nanotechnology,epitaxial growth

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