GaP source-drain SOI 1T-DRAM: Solving the key technological challenges

Ashish Pal,Aneesh Nainani,Zhiyuan Ye,Xinyu Bao,Errol Antonio C Sanchez,Krishna C Saraswat

SOI-3D-Subthreshold Microelectronics Technology Unified Conference（2013）

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Abstract

SOI based GaP source drain 1T DRAM with silicon channel is proposed. Using BJT-latch based programing, it is shown that the scalability of GaP-SD 1T-DRAM can be extended up to 20nm. Nickel alloying of GaP is proposed as a method to reduce the sheet and contact resistance of GaP source and drain. Using nickel alloying, the ON-current of the GaP-SD transistor is improved by an order and the proper scalability behavior is established.

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Key words

dram chips,iii-v semiconductors,bipolar transistors,contact resistance,flip-flops,gallium compounds,silicon-on-insulator,1t-dram,bjt-latch based programing,gap,gap-sd transistor,soi substrate,gallium phosphide source-drain,nickel alloying,scalability,sheet resistance,silicon channel,silicon on insulator

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