A Floating Body Cell (FBC) fully Compatible with 90nm CMOS Technology Node for Embedded Applications

Takeshi Hamamoto,Yoshihiro Minami,Tomoaki Shino,Atsushi Sakamoto,Tomoki Higashi,Naoki Kusunoki,Kunihiko Fujita,Kosuke Hatsuda,Takashi Ohsawa,Noriaki Aoki,Hiroshi Tanimoto,Mutsuo Morikado,Hiroomi Nakajima,Kazumi Inoh,Akihiro Nitayama

Padova（2006）

引用 5|浏览25

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关键词

cmos memory circuits,dram chips,embedded systems,silicon-on-insulator,90 nm,cmos technology,soi dram,soi substrate,floating body cell,high density embedded memory,one-transistor memory cell,silicon on insulator

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