A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface.

Noboru Shibata,Kazushige Kanda,Toshiki Hisada,Katsuaki Isobe,Manabu Sato,Yui Shimizu,Takahiro Shimizu,Takahiro Sugimoto,Tomohiro Kobayashi,K. Inuzuka,Naoaki Kanagawa,Yasuyuki Kajitani,Takeshi Ogawa,J. Nakai,Kiyoaki Iwasa,Masatsugu Kojima,Toshihiro Suzuki,Yuya Suzuki,Shintaro Sakai,Tomofumi Fujimura,Yuko Utsunomiya,Toshifumi Hashimoto,M. Miakashi,Naoki Kobayashi,M. Inagaki,Yuuki Matsumoto,Satoshi Inoue,Yoshinao Suzuki, D. He,Yasuhiko Honda,Junji Musha,M. Nakagawa,Mitsuaki Honma,Naofumi Abiko,Mitsumasa Koyanagi,Masahiro Yoshihara,Kazumi Ino,Mitsuhiro Noguchi,Teruhiko Kamei,Yosuke Kato,Shingo Zaitsu,Hiroaki Nasu,T. Ariki,Hardwell Chibvongodze,Mitsuyuki Watanabe,Hong Ding,Naoki Ookuma,Ryuji Yamashita,G. Liang,Gertjan Hemink,Farookh Moogat,Cuong Trinh,Masaaki Higashitani,Tuan Pham,K. Kanazawa

ISSCC（2012）

引用 45|浏览50
暂无评分
关键词
NAND circuits,flash memories,integrated circuit reliability,NAND flash memory,USB devices,bit cost,camcorders,cell phones,die micrograph,digital cameras,flash markets,flash-memory-die densities,market demands,memory size 64 GByte,multilevel flash memory,size 19 nm,solid-state drives,toggle mode interface,voltage 1.8 V,
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要