Impact Of Design On High-Frequency Performance Of Advanced Mim Capacitors Using Si3n4 Dielectric Layers

High-frequency characterizations of ultra thin 32 nm PECVD Si3N4 dielectric in an advanced metal-insulator-metal (MIM) capacitors are presented, with focus on the impact of design on the performance of MIM capacitors. Frequency dependent capacitance has been extracted over a wide range of frequency bandwidth. An equivalent model circuit of capacitors including four parameters was developed to explain this behavior. The results have been compared with the values obtained from a 3-D electromagnetic modeling. A specific chart has been introduced to predict the electrical performance of new MIM capacitor designs.