基本信息
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职业迁徙
个人简介
The GaAs LNA (Low Noise Amplifier), jointly developed by my group and Tagore Tech, for sub-6 GHz 5G applications, is now available commercially. The LNA’s have world class performance with noise figure of 0.4dB, which belongs to the ultralow noise category.
Our industry standard ASM-HEMT Model is now available in EDA tools - AWR Microwave Office, AMCAD-IVCAD, Keysight, Parameter Extraction Video, Silvaco-SmartSpice, Harmony, Utmost-IV.
We have signed NDA to collaborate on new technology development with Infineon, ST Microelectronics, Micron, Qualcomm, Intel, TagoreTech, Maxlinear, Applied Materials, Global Foundries.
Our industry standard ASM-HEMT Model is now available in EDA tools - AWR Microwave Office, AMCAD-IVCAD, Keysight, Parameter Extraction Video, Silvaco-SmartSpice, Harmony, Utmost-IV.
We have signed NDA to collaborate on new technology development with Infineon, ST Microelectronics, Micron, Qualcomm, Intel, TagoreTech, Maxlinear, Applied Materials, Global Foundries.
研究兴趣
论文共 464 篇作者统计合作学者相似作者
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IEEE transactions on electron devices/IEEE transactions on electron devicespp.1-6, (2024)
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)pp.1-3, (2024)
Device Research Conferencepp.1-2, (2024)
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2024): 516-524
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)pp.1-3, (2024)
IEEE TRANSACTIONS ON ELECTRON DEVICESno. 1 (2024): 62-69
IEEE transactions on electron devices/IEEE transactions on electron devicesno. 1 (2024): 200-205
crossref(2024)
IEEE TRANSACTIONS ON ELECTRON DEVICES (2024)
GaN Transistor Modeling for RF and Power Electronicspp.203-228, (2024)
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作者统计
#Papers: 464
#Citation: 5491
H-Index: 37
G-Index: 59
Sociability: 6
Diversity: 0
Activity: 12
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