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论文共 36 篇作者统计合作学者相似作者

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Optimized Two-Stage & Two-phase 48V-1V DC-DC Converter with Large Load Current Up to 100A

Hongjie Peng,Jinyan Wang,Ziheng Liu, Ju Gao,Xin Wang, Ji Li,Yandong He,Jin Wei, Yong Xie

2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)pp.1629-1633, (2024)

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Cross-Domain Defect GAN: Defect Generation for Defect Detection in Industrial Area

Xin Wang,Xiao Huang, Zhongmu Yue,Jie Ma

2024 3rd International Conference on Big Data, Information and Computer Network (BDICN)pp.194-198, (2024)

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Hybrid P-Gan/mis Gate HEMT Suppressing Drain-Induced Dynamic Threshold Voltage Instability

Chen Wang,Jinyan Wang,Xin Wang,Ziheng Liu,Jiayin He, Ju Gao, Chengkang Ao,Maojun Wang,Jin Wei

IEEE Electron Device Lettersno. 99 (2024): 1-1

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Dynamic Extension Behavior of the Depletion Region in GaN HEMTs Monitored with A Channel-Probe Branch Structure

Xin Wang,Jinyan Wang,Bin Zhang, Chen Wang, Ziheng Liu, Jiayin He, Ju Gao, Hongyue Wang,Jin Wei,Maojun Wang

IEEE Electron Device Letters（2024）

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Study on the Preparation and Characterization of Si-Based Sputtered PZT Films with the Insertion of LNO Buffer Layer

Wenbo Xia,Jinyan Wang,Lingfeng Mao,Jiayin He,Ziheng Liu,Xin Wang, Chen Wang,Ju Gao,Ji Li, Yi Zhao, Jing Xie

Springer Proceedings in Physics Proceedings of the 9th International Symposium on Hydrogen Energy, Renewable Energy and Materialspp.287-295, (2024)

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Investigation of the Trap States and V Th Instability in Normally-Off GaN MIS-FETs with LPCVD SiNx/PEALD AlN Gate Dielectric Stack and in Situ H2/N2 Plasma Pretreatment

Chengyu Huang,Jinyan Wang,Maojun Wang,Jin He,Mengjun Li,Bin Zhang,Xin Wang,Jiayin He,Ziheng Liu,Yandong He

IEEE transactions on electron devices/IEEE transactions on electron devicesno. 11 (2023): 5563-5569

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Experimental Measurement of Depletion Region Distribution in Gan Hemts with Channel-Probe Branch

Bin Zhang,Jinyan Wang,Xin Wang,Chengyu Huang, Chen Wang,Jiayin He,Maojun Wang,Jianghui Mo, Ruqing Liu,Wengang Wu

Social Science Research Network (2022)

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Improved Performance of Enhancement-Mode GaN MIS-FET Based on a Self-Terminating Gate Recess Etching Technique with in Situ NH3 Pre-Treatment

Bin Zhang,Jinyan Wang,Mengjun Li,Chengyu Huang,Jiayin He,Xin Wang,Chen Wang,Hongyue Wang,Jianghui Mo,Maojun Wang,Wengang Wu

Japanese journal of applied physicsno. 1 (2022): 010902-010902

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Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT with in Situ H₂/N₂ Plasma Pretreatment

Bin Zhang,Jinyan Wang,Xin Wang,Chen Wang,Chengyu Huang,Jiayin He,Maojun Wang,Jianghui Mo,Yansheng Hu,Wengang Wu

IEEE Electron Device Letters（2022）

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Monolithic Integration of GaN-Based Enhancement/Depletion-Mode MIS-HEMTs with AlN/SiN Bilayer Dielectric

Bin Zhang,Jinyan Wang,Chen Wang,Xin Wang,Chengyu Huang,Jiayin He,Maojun Wang,Jianghui Mo,Yansheng Hu,Wengang Wu

IEEE electron device letters（2022）

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