Xavier Wallart

Xavier Wallart received the Electronic Engineering degree from the Institut Supérieur d'Electronique et du Numérique, Lille, France, in 1984, and the Ph.D. degree in material science from the University of Lille 1, Villeneuve d'Ascq, France, in 1988. In 1991, he joined the Centre National de la Recherche Scientifique, Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), University of Lille 1, where he is involved in the growth of III–V arsenide and phosphide-based heterostructures by molecular beam epitaxy (MBE) for microwave devices and circuits. He has also initiated the X-ray photoelectron spectroscopy characterization with IEMN. His current research interests include the MBE growth and characterization of antimonide-based heterostructures for high-frequency/low-power devices, epitaxial grapheme on SiC substrates, and semiconducting nanostructure localized growth.