基本信息
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职业迁徙
个人简介
Tangsheng Chen was born in Hubei, China, in 1964. He received the B.S. and M.S. degrees in semiconductor physics and devices from Xi’an Jiaotong University (XJTU), Xi’an, China, in 1986 and 1989, respectively.
He joined the Nanjing Electronic Devices Institute (NEDI), Nanjing, China, in 1989, where he has made major contributions to the development of compound semiconductor devices, including GaAs-based HEMTs and GaN HEMTs. He is currently the Principal Engineering Fellow and the Technical Director of compound semiconductor technology with NEDI.
研究兴趣
论文共 310 篇作者统计合作学者相似作者
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Science advancesno. 34 (2024): eadp2877-eadp2877
IEEE transactions on electron devices/IEEE transactions on electron devicesno. 1 (2024): 940-943
IEEE transactions on circuits and systems I, Regular papersno. 3 (2024): 1105-1115
2024 International Conference on Microwave and Millimeter Wave Technology (ICMMT) (2024): 1-3
Journal of Physics Conference Seriesno. 1 (2024)
Chinese Physics Bno. 3 (2024)
IEEE TRANSACTIONS ON ELECTRON DEVICES (2024)
Advanced Fiber Laser Conference (AFL2023) (2024)
Xinxin Yu,Hehe Gong, Jianjun Zhou,Zhenghao Shen,Fangfang Ren,Dunjun Chen,Xin Ou,Shulin Gu,Yuechan Kong, Zhonghui Li,Tangsheng Chen,Rong Zhang,Youdou Zheng,Jiandong Ye
IEEE Transactions on Electron Devicesno. 99 (2024): 1-6
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作者统计
#Papers: 310
#Citation: 3326
H-Index: 23
G-Index: 51
Sociability: 7
Diversity: 3
Activity: 18
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