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个人简介
Takeshi Yamaguchi received the B.S., M.S., and Ph.D. degrees from the University of Tsukuba, Tsukuba, Japan, in 1992, 1994, and 1997, respectively, all in materials science.
He joined the Research and Development Center, Toshiba Corporation, in 1997, where he was engaged in the research on the physics and technology of ferroelectric devices. From 1999 to 2006, he was engaged in the research on the reliability physics and properties of MISFET with high-k gate dielectrics. Since 2007, he has been with the Memory Division, Toshiba Corporation, Yokkaichi, Japan, where he has been leading the ReRAM memory cell development.
研究兴趣
论文共 29 篇作者统计合作学者相似作者
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IEEE transactions on device and materials reliabilityno. 2 (2009): 163-170
Phoenix, AZpp.659-660, (2008)
IEEE Transactions on Electron Devicesno. 9 (2007): 2445-2451
Meeting abstracts/Meeting abstracts (Electrochemical Society CD-ROM)no. 22 (2006): 1131-1131
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials (2006): 1120-1121
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作者统计
#Papers: 29
#Citation: 401
H-Index: 10
G-Index: 19
Sociability: 4
Diversity: 2
Activity: 0
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