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个人简介
Toshiaki Iwamatsu received the M.S. degree from Kyushu University, Fukuoka, in 1989, and the Ph.D. degree from Osaka University, Osaka, Japan, in 1998. In 1989, he joined the ULSI Development Center, Mitsubishi Electric Corporation, Itami, Japan, where he has been engaged in SOI process and device technology research. Since 2003, he has been with the Advanced Device Development Department, Renesas Electronics Corporation, Itami. He had been responsible for the research and development of the advanced SOI MOSFETs for high-speed and low-power LSIs. He also had been a Visiting Professor with Osaka University from 2007 to 2013. Since 2013, he has been with the Advanced Technology Research and Development Center, Mitsubishi Electric Corporation, Amagasaki, Japan. Dr. Iwamatsu is a member of the Japan Society of Applied Physics.
研究兴趣
论文共 192 篇作者统计合作学者相似作者
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Materials Science Forum (2022): 447-451
JAPANESE JOURNAL OF APPLIED PHYSICSno. 8 (2020): 084003-084003
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作者统计
#Papers: 194
#Citation: 3413
H-Index: 28
G-Index: 38
Sociability: 6
Diversity: 2
Activity: 4
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