Stephen Van Campen

Stephen Van Campen (M'99) received the B.S. degree in physics with a concentration in electrical engineering from Clarkson University, Potsdam, NY, in 1987, and the M.S. and Ph.D. degrees in physics from Lehigh University, Bethlehem, PA, in 1989 and 1994, respectively. His graduate research was in quantum mechanical semiconductor devices, and he was able to build and measure properties of 2-D quantum systems in silicon MOSFETs. He was then with Kimball Physics Inc., Wilton, NH, until 2000, where he characterized custom electron and ion sources. There he developed field emission and thermionic cathodes, troubleshot high-voltage electron guns, and developed fabrication techniques for cathode and electron guns. Since 2000, he has been with Northrop Grumman Corporation, Linthicum, MD, where he has been the Principle Investigator of several silicon carbide power switch programs which developed high-power semiconductor devices such as the 10-kV SiC MOSFET, JBS diodes, p-i-n diodes, 7-kV GTO thyristors, and an all-SiC cascode switch designed at 1200 V for commercial applications. He continues doing research in a variety of semiconductor technologies and is currently the Manager of the Advance Technology Development at Northrop Grumman Corporation's ATL facility.