Slavo Kicin - Corporate Research, ABB Switzerland Ltd

基本信息

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职业迁徙

个人简介

Slavo Kicin received the Dipl.-Ing. and Ph.D. degrees from Slovak Technical University, Bratislava, Slovakia, in 1996 and 2001, respectively. From 1996 to 2001, he was a Ph.D. student with the Institute of Electrical Engineering, Slovak Academy of Science, Bratislava. In 2001, he joined the Department of Physics, ETH Zürich, Zürich, Switzerland, as a Research Assistant. He is currently a Principal Scientist with the Group of Packaging and Reliability, ABB Corporate Research, Baden-Dättwil, Switzerland.

研究兴趣

论文共 20 篇作者统计合作学者相似作者

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Dynamic Bias-Temperature Instability Testing in SiC MOSFETs

Edoardo Martino,Slavo Kicin, Yuan Zong, Ahmad Nasralla,Gianpaolo Romano,Ralph Burkart, Athanasios Mesemanolis,Stephan Wirths

Solid State Phenomena (2024): 59-64

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A Scalable SPICE-Based Compact Model for 1.7 Kv SiC MOSFETs

Alessandro Borghese,Michele Riccio,Luca Maresca,Giovanni Breglio,Slavo Kicin,Andrea Irace

Materials Science Forum (2022): 658-662

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Ultra-Fast Switching 3.3kv SiC High-Power Module

Slavo Kicin,Ralph Burkart, Jean-Yves Loisy,Francisco Canales, Muhammad Nawaz, Gernot Stampf, Pauline Morin, Tobias Keller

PCIM Europe digital days 2020 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Managementpp.1-8, (2020)

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Characterization of 1.7kv SiC MOSFET / Si IGBT Cross-Switch Hybrid on the LinPak Platform

Slavo Kicin,Umamaheswara Vemulapati,Stanislav Skibin,Francisco Canales, Jean-Yves Loisy, Gernot Stampf,Munaf Rahimo

PCIM Europe 2019 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Managementpp.1-8, (2019)

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Robust 3.3kv Silicon Carbide MOSFETs with Surge and Short Circuit Capability

L. Knoll,A. Mihaila,F. Bauer,V. Sundaramoorthy,E. Bianda, R. Minamisawa,L. Kranz,M. Bellini,U. Vemulapati,H. Bartolf,S. Kicin,S. Skibin,C. Papadopoulos,M. Rahimo

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)（2017）

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1.7 Kv High-Current SiC Power Module Based on Multi-Level Substrate Concept and Exploiting MOSFET Body Diode During Operation

Slavo Kicin,Stanislav Skibin,Christof Bernhard,Enea Bianda,Francisco Canales,Samuel Hartmann,Fabian Fischer, Pauline Morin,Robert Gade

PCIM Europe 2017 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Managementpp.1-7, (2017)

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