Shigeaki Zaima

Shigeaki Zaima received the B.E., M.E., and Ph.D. degrees from Tohoku University, Sendai, Japan, in 1977, 1979, and 1982, respectively. He was with the Department of Electric and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Japan, in 1982, where he was engaged in research on semiconductor surfaces and interface science. He was with the School of Engineering, Nagoya University, Nagoya, Japan, in 1986, where he was engaged in research on thin-film growth, surfaces, and interface science for Si LSI technology. From 1990 to 1991, he was a Visiting Scientist with the FOM Institute for Atomic and Molecular Physics, Amsterdam, The Netherlands, where he studied semiconductor surfaces and silicide/Si interface structures using the medium-energy ion scattering. From 1997 to 2004, he was a Professor with the Center for Cooperative Research in Advanced Science and Technology, Nagoya University, Japan. Since 2004, he has been a Professor with the Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University. He is currently working on the research of materials and their interfaces for high-mobility channels, high-$k$ gate dielectrics, metal gates, and metal/semiconductor contacts in next-generation Si ULSI devices. Prof. Zaima is a Fellow of the Japan Society of Applied Physics and a member of the Materials Research Society.