基本信息
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职业迁徙
个人简介
Saied Tehrani (S'82–M'85–SM'92) received the B.S. degree from the University of North Carolina, Charlotte, in 1981, and the M.S. and Ph.D. degrees in electrical engineering from the University of Florida, Gainesville, in 1982 and 1985, respectively.
He joined Motorola in 1985 and was involved in the device and process research and development of heterojunction devices for high efficiency and low power applications and its transfer into production for wireless applications. He started working on the magnetic random access memory (MRAM) in 1995. He is currently director of MRAM technology at the Freescale Semiconductor Embedded Memory Center.
研究兴趣
论文共 100 篇作者统计合作学者相似作者
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引用量
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期刊级别
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mag(2012)
引用32浏览0引用
32
0
mag(2010)
引用24浏览0引用
24
0
J M Slaughter,Nicholas D Rizzo,F B Mancoff,Renu Whig, J J Sun,Kenneth H Smith,K Nagel,Thomas W Andre,D Houssameddine,S Tehrani
mag(2010)
引用23浏览0引用
23
0
R W Dave, G Steiner, J M Slaughter, J J Sun,B Craigo,Srinivas V Pietambaram, K C Smith,Gregory W Grynkewich, M M Deherrera,Johan Akerman,S Tehrani, Tape Hexaferrite, F Quanyuan,Ralph C Smith,Marcelo J Dapino, D S Bartran
mag(2009)
引用23浏览0引用
23
0
Vernon Patrick Oneil,J K Abrokwah, M Hashemi,Jennhwa Huang,Vijay K Nair, Farideh Nikpourian,S Tehrani
mag(2005)
引用23浏览0引用
23
0
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作者统计
#Papers: 100
#Citation: 6741
H-Index: 39
G-Index: 81
Sociability: 5
Diversity: 2
Activity: 0
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