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个人简介
Raseong Kim (M’11) received the Ph.D. degree in electrical and computer engineering from Purdue University, West Lafayette, IN, USA.
In 2011, she joined Intel Corporation, Hillsboro, OR, USA, where she is currently a Staff Process TD Engineer. She has been involved in novel transistor benchmarking and research on charge-based beyond-CMOS devices.
研究兴趣
论文共 40 篇作者统计合作学者相似作者
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Punyashloka Debashis, Hojoon Ryu, Rachel Steinhardt,Pratyush Buragohain,John J Plombon,Kirby Maxey,Kevin P O'Brien,Raseong Kim,Arnab Sen Gupta,Carly Rogan, Jennifer Lux,I-Cheng Tung,Dominique Adams, Melisa Gulseren,Ashish Verma Penumatcha,Shriram Shivaraman,Hai Li, Ting Zhong, Shane Harlson,Tristan Tronic,Adedapo Oni, Steve Putna,Scott B Clendenning,Matthew Metz,Marko Radosavljevic,Uygar Avci,Ian A Young
Nano lettersno. 40 (2024): 12353-12360
SMALLno. 33 (2024)
JOURNAL OF APPLIED PHYSICSno. 9 (2023)
IEEE transactions on electron devices/IEEE transactions on electron devicesno. 8 (2023): 4014-4021
Physical review B (2022)
IEEE Electron Device Lettersno. 9 (2020): 1332-1335
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作者统计
#Papers: 40
#Citation: 1436
H-Index: 23
G-Index: 35
Sociability: 5
Diversity: 2
Activity: 1
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