基本信息
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职业迁徙
个人简介
Matteo Rapisarda was born in Rome, Italy, in 1980. He received a master in Physics from “Universita Tor Vergata” in 2005 and PhD in physics from “Universita Roma Tre” in 2010. From 2006 to 2008 he has carried out his research activity at IFN-CNR, Rome, on characterization and modeling of polysilicon TFTs. In 2008 he joined IMM-CNR, where he works as a researcher. His activities focus on fabrication, characterization and modeling of OTFTs.
研究兴趣
论文共 58 篇作者统计合作学者相似作者
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I. Fratelli,L. Basiricò,A. Ciavatti, M. Verdi,S. Calvi,S. M. Carturan,A. Valletta, A. Aloisio,F. Pino,M. Campajola,S. Moretto,L. Tortora,M. Rapisarda, M. Chiari, S. De Rosa,S. Bertoldo, O. Cesarini,P. Di Meo, F. Tommasino,E. Sarnelli,L. Mariucci, P. Branchini,A. Quaranta,B. Fraboni
2023 IEEE Nuclear Science Symposium, Medical Imaging Conference and International Symposium on Room-Temperature Semiconductor Detectors (NSS MIC RTSD)pp.1-2, (2023)
IEEE Sensors Lettersno. 5 (2023): 1-4
Calvi, Sabrina,Basiricò, Laura,Carturan, Sara M.,Fratelli, Ilaria,Valletta, Antonio,Aloisio, Alberto,De Rosa, Stefania,Pino, Felix,Campajola, Marcello,Ciavatti, Andrea,Tortora, Luca,Rapisarda, Matteo,Moretto, Sandra,Verdi, Matteo, Bertoldo, Stefano,Cesarini, Olivia, Di Meo, Paolo,Chiari, Massimo,Tommasino, Francesco,Sarnelli, Ettore,Mariucci, Luigi,Branchini, Paolo,Quaranta, Alberto,Fraboni, Beatrice
npj Flexible Electronicsno. 1 (2023): 1-11
IEEE SENSORS LETTERSno. 5 (2023)
ACS omegano. 46 (2023): 43651-43663
Advanced electronic materialsno. 5 (2023)
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作者统计
#Papers: 58
#Citation: 664
H-Index: 15
G-Index: 24
Sociability: 5
Diversity: 2
Activity: 14
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