Ryuzo Iga

Ryuzo Iga was born in Toyama, Japan, in 1962. He received the B.E. and M.E. degrees in applied fine chemistry and the Dr. Eng. degree in electromagnetic energy engineering from Osaka University, Osaka, Japan, in 1985, 1987, and 1995, respectively. He joined Nippon Telegraph and Telephone (NTT), Opto-Electronics Laboratories, in 1987. Since then, he has been working with the research on the crystal growth of III–V semiconductor compounds. His Doctoral Dissertation was on selective growth by laser-assisted MOMBE. He joined NTT Photonics Laboratories, in 1999, and he is currently with NTT Device Technology Laboratories. His current research interests include MOVPE growth technologies for the fabrication of optical integrated devices. He is a Member of the Japan Society of Applied Physics.