Renato Minamisawa

Renato A. Minamisawa received the B.Sc. degree in medical physics from the University of São Paulo, Ribeirão Preto, Brazil, in 2005 and the M.Sc. degree in physics from the Alabama Agricultural and Mechanical University (AAMU), Huntsville, in 2008. He is currently working toward the Ph.D. degree in physics at the Rheinisch-Westfälische Technische Hochschule Aachen University, Jülich, Germany. From 2006 to 2008, he was with the Center of Irradiation of Materials, AAMU, working on ion beam nanofabrication of high-performance porous membranes and on the fabrication and characterization of thermoelectric devices. In 2008, he joined the Jülich Research Center, Jülich, where his current research focuses on the fabrication of strained silicon by ion implantation of thin virtual substrates, on the doping of strained Si nanowires on insulator, and on the fabrication and investigation of carrier transport in nanoscale strained silicon–germanium channel complementary metal–oxide–semiconductor devices with novel high-$\kappa$ gate dielectrics. Mr. Minamisawa is a Student Member of the Material Research Society. He received the honor mention award at the Simpósio Internacional de Iniciação Científica da Universidade de São Paulo, Brazil, in 2003, and the Alabama Experimental Program to Stimulate Competitive Research Program Graduate Research Scholar Award in 2008.